| PART |
Description |
Maker |
| ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN4438 |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9235 |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4392 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4925 |
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| SSF1116A |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
|
| 10-FZ122PA150SC01-P990F18 |
Trench Fieldstop IGBT technology
|
Vincotech
|
| SSF6814 |
Advanced trench process technology
|
Silikron Semiconductor Co.,...
|
